Distinguished Webinar on Next-Gen Energy Efficient Electronics with 3D Integration and Smart Materials

Abstract: With the rise in global data demands, energy efficiency in electronics has become a defining challenge for sustainable progress in AI, healthcare, IoT, and beyond. Today’s electronics, constrained by materials and architectures that separate computing and memory, are approaching their energy and latency limits for data-intensive applications. Emerging solutions such as 3D integration of logic and memory devices offer great promise; however, their realization requires innovations in materials, transport physics, device engineering, and semiconductor-compatible fabrication. In this talk, I will discuss how atomic-scale engineering and integrating heterogeneous materials and devices can address these intertwined challenges with applications in low-power memory, low-resistance scaled interconnects, and devices beyond the limit of conventional electrostatics. I will conclude with my group’s vision for advancing heterogeneous materials and multifunctional nanodevices to drive the future of 3D-integrated, energy-efficient electronics.

Brief Biography of the Speaker: Dr. Asir Intisar Khan is a postdoctoral scholar at the Electrical Engineering and Computer Sciences department at UC Berkeley, where he will launch his research group as an Assistant Professor in January 2026. He received his PhD and MS in Electrical Engineering from Stanford University and his BSc from BUET EEE. His research focuses on advancing energy-efficient electronics through atomic-scale engineering of heterogeneous materials and nanodevices, addressing their energy limits. Asir's work has been recognized with the IEEE-EDS PhD Fellowship, MRS Gold Graduate Student Award, and the AVS Russell & Sigurd Varian Award, along with best paper and presentation awards at IEEE VLSI, MRS, SRC TECHCON, and AVS. He has held research roles at TSMC and IBM T.J. Watson, and currently serves as a Fellow at the Stanford Emerging Technology Review.