Laplace transform, Initial and Final value theorems. Transfer Functions: Open-loop stability, Poles, Zeros, Time response, Transients, Steady-state, Block diagrams and signal flow diagram, Feedback principles: Open versus Closed-loop control, High gain control, Inversion; State variables: Signal flow diagram to state variables, transfer function to state variable and state variable to transfer function, Stability of closed-loop systems: Routh’s method, Root locus, PID control: Structure, Design using root locus, Pole assignment: Sylvester’s theorem, PI and PID synthesis using pole assignment, Frequency Response: Nyquist plot, Bode diagram, Nyquist stability theorem, Stability margins, Closed-loop sensitivity functions, Model errors, Robust stability, Controller design using frequency response: Proportional control, Lead-lag control, PID control, Digital control systems: introduction, sampled data systems, stability analysis in Z-domain.
Course Catalogue
In this course students will perform experiments to verify practically the theories and concepts learned in EEE 403. The student will also design and implement a small scale microprocessor system learned in EEE 403.
Passive and active loads and frequency limitation. Current mirror: Basic, cascade and active current mirror. Differential Amplifier: Introduction, large and small signal analysis, common mode analysis and differential amplifier with active load. Noise: Introduction
to noise, types, representation in circuits, noise in single stage and differential amplifiers and bandwidth. Band-gap references: Supply voltage independent biasing, temperature independent biasing, proportional to absolute temperature current generation and constant transconductance
biasing. Switching capacitor circuits: Sampling switches, switched capacitor circuits including unity gain buffer, amplifier and integrator. Phase Locked Loop (PLL): Introduction, basic PLL and charge pumped PLL.
Substrate materials: Crystal growth and wafer preparation, epitaxial growth technique, molecular beam epitaxy, chemical vapor deposition (CVD). Doping techniques: Diffusion and ion implantation. Growth and deposition of dielectric layers: Thermal oxidation, CVD, plasma CVD, sputtering and silicon-nitride growth. Etching: Wet chemical etching, silicon and GaAs etching, anisotropic etching, selective etching, dry physical etching, ion beam etching sputtering and etching and reactive ion etching. Cleaning: Surface cleaning, organic cleaning and RCA cleaning. Lithography: Photoreactive materials, pattern generation, pattern transfer and metallization. Discrete device fabrication: Diode, transistor, resistor and capacitor. Integrated circuit fabrication: Isolation-pn junction isolation, mesa isolation and oxide isolation. BJT based microcircuits, p-channel and n-channel MOSFETs, complimentary MOSFETs and silicon on insulator devices. Testing, bonding and packaging.
VLSI technology: Top down design approach, technology trends and design styles. Review of MOS transistor theory: Threshold voltage, body effect, I-V equations and characteristics, latch-up problems NMOS inverter, CMOS inverter, pass-transistor and transmission gates. CMOS circuit characteristics and performance estimation: Resistance, capacitance, rise and fall times, delay, gate transistor sizing and power consumption. CMOS circuit and logic design: Layout design rules and physical design of simple logic gates. CMOS system design: Address, multiplier and memory system, arithmetic logic unit. Programmable logic arrays. I/O systems. VLSI testing.
This course consists of two parts. In the first part, students will perform experiments to verify practically the theories and concepts learned in EEE 425. In the second part, students will design simple systems using the principles learned in EEE 425.
VLSI MOS system design: Layout extraction and verification, full and semi- full custom design styles and logical and physical positioning. Design entry tools: Schematic capture and HDL. Logic and switch level simulation. Static timing. Concepts and tools of analysis, solution techniques for floor planning, placement, global routing and detailed routing. Application specific integrated circuit design including FPGA.
This course consists of two parts. In the first part, students will perform experiments to verify practically the theories and concepts learned in EEE 427. In the second
part, students will design simple systems using the principles learned in EEE 427.
Compound semiconductor: Zinc-blend crystal structures, growth techniques, alloys, band gap, density of carriers in intrinsic and doped compound semiconductors, Hetero Junctions: Band alignment, band offset, Anderson’s rule, single and double sided hetero- junctions, quantum wells and quantization effects, lattice mismatch and strain strain and common hetero-structure material systems. Hetero-Junction diode: Band banding, carrier transport and I- V characteristics. Hetero-junction field effect transistor: Structure and principle, band structure, carrier transport and I-V characteristics. Hetero-structure bipolar transistor (HBT): Structure and operating principle, quasi-static analysis, extended Gummel-Poon model, Ebers-Moll model, secondary effects and band diagram of graded alloy base HBT.
Optical properties in semiconductor: Direct and indirect band-gap materials,
radiative and non-radiative recombination, optical absorption, photo-generated excess carriers, minority carrier life time, luminescence and quantum efficiency in radiation. Properties of light: Particle and wave nature of light, polarization, interference, diffraction and blackbody radiation. Light emitting diode (LED): Principles, materials for visible and infrared LED, internal and external efficiency, loss mechanism, structure and coupling to optical fibers. Stimulated emission and light amplification: Spontaneous and stimulated emission, Einstein relation, population inversion, absorption of radiation, optical feedback and threshold conditions. Semiconductor Lasers: population inversion in degenerate semiconductors, laser activity, operating wavelength, threshold current density, power output, hetero-junction lasers, optical and electrical confinement. Introduction to quantum well lasers. Photo-detectors: Photoconductors, junction photodetectors, PIN detectors, avalanche photodiodes and phototransistors. Solar cells: Solar energy and spectrum, silicon and Schottkey solar cells. Modulation of light: Phase and amplitude modulation, electro-optic effect, acousto-optic effect and magneto-optic devices. Introduction to integrated optics.